IRG4IBC30W Todos los transistores

 

IRG4IBC30W - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4IBC30W

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 8.4

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 980pF

Empaquetado / Estuche: ISO220

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IRG4IBC30W Datasheet (PDF)

1.1. irg4ibc30kd.pdf Size:198K _international_rectifier

IRG4IBC30W
IRG4IBC30W

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C • High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para

1.2. irg4ibc30fd.pdf Size:223K _international_rectifier

IRG4IBC30W
IRG4IBC30W

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Very Low 1.59V votage drop VCES = 600V • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V • Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

 1.3. irg4ibc30s.pdf Size:129K _international_rectifier

IRG4IBC30W
IRG4IBC30W

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G previous generation • Industry standard TO-220 Full

1.4. irg4ibc30w.pdf Size:163K _international_rectifier

IRG4IBC30W
IRG4IBC30W

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12

 1.5. irg4ibc30ud.pdf Size:231K _international_rectifier

IRG4IBC30W
IRG4IBC30W

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • 2.5kV, 60s insulation voltage U VCES = 600V • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant m

Otros transistores... IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , GT30J301 , IRG4P254S , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD .

 

 
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