IRG4IBC30W - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4IBC30W
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 17 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 71 pF
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de IRG4IBC30W - IGBT
IRG4IBC30W Datasheet (PDF)
irg4ibc30w.pdf
PD 91791AIRG4IBC30WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.1VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12
irg4ibc30kd.pdf
PD -91690AIRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.21V para
irg4ibc30fd.pdf
PD- 91751AIRG4IBC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.59V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.59V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30s.pdf
PD - 94293IRG4IBC30SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating freqencies (
irg4ibc30ud.pdf
PD91753AIRG4IBC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200G kHz in resonant m
Otros transistores... IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRGP4063 , IRG4P254S , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD .
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