BSM300GA170DN2E3166 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM300GA170DN2E3166
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 440 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 3500 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM300GA170DN2E3166 Datasheet (PDF)
bsm300ga170dn2 bsm300ga170dn2s.pdf

BSM 300 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 5.6 OhmType VCE IC Package Ordering CodeBSM 300 GA 170 DN2 1700V 440A SINGLE SWITCH 1 C67070-A2706-A67BSM 300 GA 170 DN2 S 1700V 440A SSW SENSE 1 C67070-A2708-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo
bsm300ga170dn2e3166.pdf

BSM300GA170DN2 E3166IGBT Power ModulePreliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 5.6 OhmType VCE IC Package Ordering CodeBSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 V
bsm300ga170dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 300 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 300 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 600 APeriodischer Kollektor Spitzens
bsm300ga120dlcs.pdf

Technische Information / technical informationIGBT-ModuleBSM300GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesE 3 B 2 CBB32 1322 14DD D 6 6 6 6F 3FB 2 3 CBB326 B4 3E 3 B 2 4 32 3CF B2 6 6 !6 6 6 " 6#$% &6
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXA40PG1200DHGLB | RCM10N40 | CM600DY-34H | JT075N120F2MA1E | VS-100MT060WDF | DIM800XSM45-TS | HGT1S7N60B3D
History: IXA40PG1200DHGLB | RCM10N40 | CM600DY-34H | JT075N120F2MA1E | VS-100MT060WDF | DIM800XSM45-TS | HGT1S7N60B3D



Liste
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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