BSM30GD60DLC_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM30GD60DLC_E3224
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 135 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 6.5 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM30GD60DLC_E3224 Datasheet (PDF)
bsm30gd60dlc e3224.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 30 GD 60 DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC = 70C IC,nom. 30 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 40 APeriodischer Kollektor Spitze
bsm300gb120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM300GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm300ga170dn2e3166.pdf

BSM300GA170DN2 E3166IGBT Power ModulePreliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 5.6 OhmType VCE IC Package Ordering CodeBSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 V
bsm300gb120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM300GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
Otros transistores... BSM300GA120DN2S , BSM300GA170DLC , BSM300GA170DN2 , BSM300GA170DN2E3166 , BSM300GA170DN2S , BSM300GAR120DLC , BSM300GB120DLC , BSM300GB60DLC , YGW60N65F1A2 , BSM35GB120DN2 , BSM35GD120DLC_E3224 , BSM35GD120DN2 , BSM35GD120DN2_E3224 , BSM35GP120 , BSM35GP120G , BSM400GA120DLC , BSM400GA120DLCS .
History: IXGH30N60B
History: IXGH30N60B



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