BSM35GD120DLC_E3224 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM35GD120DLC_E3224  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 280 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Encapsulados: MODULE

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BSM35GD120DLC_E3224 datasheet

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 bsm35gd120dlc e3224.pdf pdf_icon

BSM35GD120DLC_E3224

Technische Information / Technical Information IGBT-Module BSM35GD120DLC E3224 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 35 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 70 A Periodischer Kollektor Spitzens

 3.1. Size:277K  eupec
 bsm35gd120dn2 bsm35gd120dn2 e3224.pdf pdf_icon

BSM35GD120DLC_E3224

BSM 35 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67 BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 120

 8.1. Size:144K  eupec
 bsm35gp120.pdf pdf_icon

BSM35GD120DLC_E3224

Technische Information / Technical Information IGBT-Module BSM35GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauerg

 8.2. Size:191K  eupec
 bsm35gb120dn2.pdf pdf_icon

BSM35GD120DLC_E3224

BSM 35 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gat

MOSTRAR MÁS

Otros transistores... BSM300GA170DN2, BSM300GA170DN2E3166, BSM300GA170DN2S, BSM300GAR120DLC, BSM300GB120DLC, BSM300GB60DLC, BSM30GD60DLC_E3224, BSM35GB120DN2, BT60T60ANFK, BSM35GD120DN2, BSM35GD120DN2_E3224, BSM35GP120, BSM35GP120G, BSM400GA120DLC, BSM400GA120DLCS, BSM400GA120DN2, BSM400GA120DN2S