BSM35GD120DLC_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM35GD120DLC_E3224
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 280
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 70
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 50
Carga total de la puerta (Qg), typ, nC: 350
Paquete / Cubierta: MODULE
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BSM35GD120DLC_E3224 Datasheet (PDF)
bsm35gd120dlc e3224.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM35GD120DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 35 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 70 APeriodischer Kollektor Spitzens
bsm35gd120dn2 bsm35gd120dn2 e3224.pdf
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BSM 35 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 120
bsm35gp120.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM35GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg
bsm35gb120dn2.pdf
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BSM 35 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gat
bsm35gp120g.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM35GP120GIGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauer
Otros transistores... BSM300GA170DN2 , BSM300GA170DN2E3166 , BSM300GA170DN2S , BSM300GAR120DLC , BSM300GB120DLC , BSM300GB60DLC , BSM30GD60DLC_E3224 , BSM35GB120DN2 , IRG4PC50UD , BSM35GD120DN2 , BSM35GD120DN2_E3224 , BSM35GP120 , BSM35GP120G , BSM400GA120DLC , BSM400GA120DLCS , BSM400GA120DN2 , BSM400GA120DN2S .
![BSM35GD120DLC_E3224](https://alltransistors.com/images/us.png)
![BSM35GD120DLC_E3224](https://alltransistors.com/images/es.png)
![BSM35GD120DLC_E3224](https://alltransistors.com/images/ru.png)
Liste
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