BSM35GD120DN2_E3224 Todos los transistores

 

BSM35GD120DN2_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM35GD120DN2_E3224
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 280 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: MODULE
 

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BSM35GD120DN2_E3224 Datasheet (PDF)

 0.1. Size:277K  eupec
bsm35gd120dn2 bsm35gd120dn2 e3224.pdf pdf_icon

BSM35GD120DN2_E3224

BSM 35 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 120

 3.1. Size:184K  eupec
bsm35gd120dlc e3224.pdf pdf_icon

BSM35GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM35GD120DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 35 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 70 APeriodischer Kollektor Spitzens

 8.1. Size:144K  eupec
bsm35gp120.pdf pdf_icon

BSM35GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM35GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

 8.2. Size:191K  eupec
bsm35gb120dn2.pdf pdf_icon

BSM35GD120DN2_E3224

BSM 35 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gat

Otros transistores... BSM300GA170DN2S , BSM300GAR120DLC , BSM300GB120DLC , BSM300GB60DLC , BSM30GD60DLC_E3224 , BSM35GB120DN2 , BSM35GD120DLC_E3224 , BSM35GD120DN2 , NCE80TD65BT , BSM35GP120 , BSM35GP120G , BSM400GA120DLC , BSM400GA120DLCS , BSM400GA120DN2 , BSM400GA120DN2S , BSM400GA170DLC , BSM600GA120DLC .

History: IXER20N120D1 | BSM75GB170DN2 | KWMFP40R12NS3 | APT65GP60B2 | IXXH80N65B4 | IXSP10N60B2D1 | FGY75T95SQDT

 

 
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