BSM35GD120DN2_E3224 Todos los transistores

 

BSM35GD120DN2_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM35GD120DN2_E3224
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 280 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

BSM35GD120DN2_E3224 Datasheet (PDF)

 0.1. Size:277K  eupec
bsm35gd120dn2 bsm35gd120dn2 e3224.pdf pdf_icon

BSM35GD120DN2_E3224

BSM 35 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 120

 3.1. Size:184K  eupec
bsm35gd120dlc e3224.pdf pdf_icon

BSM35GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM35GD120DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 35 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 70 APeriodischer Kollektor Spitzens

 8.1. Size:144K  eupec
bsm35gp120.pdf pdf_icon

BSM35GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM35GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

 8.2. Size:191K  eupec
bsm35gb120dn2.pdf pdf_icon

BSM35GD120DN2_E3224

BSM 35 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gat

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG7PH28UD1 | APT40GP90BG

 

 
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History: IRG7PH28UD1 | APT40GP90BG

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