BSM35GP120 Todos los transistores

Technische Information / Technical Information IGBT-Module BSM35GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauerg... See More ⇒

Technische Information / Technical Information IGBT-Module BSM35GP120G IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauer... See More ⇒

BSM 35 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67 BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 120... See More ⇒

BSM 35 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gat... See More ⇒

Technische Information / Technical Information IGBT-Module BSM35GD120DLC E3224 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 35 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 70 A Periodischer Kollektor Spitzens... See More ⇒