2N6977 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6977  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 5 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Encapsulados: TO204AA

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2N6977 datasheet

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 2n6975 2n6976 2n6977 2n6978.pdf pdf_icon

2N6977

2N6975, 2N6976, S E M I C O N D U C T O R 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 April 1995 Features Package JEDEC TO-204AA 5A, 400V and 500V BOTTOM VIEW VCE(ON) 2V COLLECTOR EMITTER (FLANGE) TFI 1 s, 0.5 s Low On-State Voltage GATE Fast Switching Speeds High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT M

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2N6977

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2N6977

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5V PD Power Dissipation @ Ta=25 C 600

 9.3. Size:61K  microsemi
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2N6977

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti

MOSTRAR MÁS

Otros transistores... 1MBH50D-060, HCKW40N65H2, HCKW60N65BH2A, HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975, 2N6976, CRG40T60AK3HD, 2N6978, 2PG352, 2PG401, 2PG402, 2SH11, 2SH12, 2SH13, 2SH14