BSM75GB170DN2 Todos los transistores

 

BSM75GB170DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM75GB170DN2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 110 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 150 nS
   Coesⓘ - Capacitancia de salida, typ: 1000 pF
   Paquete / Cubierta: MODULE
 

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BSM75GB170DN2 Datasheet (PDF)

 ..1. Size:210K  eupec
bsm75gb170dn2.pdf pdf_icon

BSM75GB170DN2

BSM 75 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 22 OhmType VCE IC Package Ordering CodeBSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700Ga

 6.1. Size:139K  eupec
bsm75gb120dlc.pdf pdf_icon

BSM75GB170DN2

Technische Information / Technical InformationIGBT-ModuleBSM75GB120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj= 25 C VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 170 APeriodischer Kollektor Sp

 6.2. Size:207K  eupec
bsm75gb120dn2.pdf pdf_icon

BSM75GB170DN2

BSM 75 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GB 120 DN2 1200V 105A HALF-BRIDGE 1 C67076-A2106-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 7.1. Size:123K  eupec
bsm75gb60dlc.pdf pdf_icon

BSM75GB170DN2

Technische Information / Technical InformationIGBT-ModuleBSM 75 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 75C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 100 APeriodischer Kollektor Spitzenstrom

Otros transistores... BSM400GA120DN2 , BSM400GA120DN2S , BSM400GA170DLC , BSM600GA120DLC , BSM600GA120DLCS , BSM75GAL120DN2 , BSM75GB120DLC , BSM75GB120DN2 , FGPF4536 , BSM75GB60DLC , BSM75GD120DLC , BSM75GD120DN2 , BSM75GD60DLC , BSM75GP60 , CM1000DUC-34SA , CM1000DXL-24S , CM100DU-12F .

History: KWMFP40R12NS3 | APT65GP60B2 | FGY75T95SQDT | IXSP10N60B2D1 | IXXH80N65B4 | STGWA30N120KD | RJP6016JPE

 

 
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