BSM75GB60DLC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM75GB60DLC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 355
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 100
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.95
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 22
Paquete / Cubierta: MODULE
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BSM75GB60DLC Datasheet (PDF)
bsm75gb60dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 75 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 75C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 100 APeriodischer Kollektor Spitzenstrom
bsm75gb120dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM75GB120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj= 25 C VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 170 APeriodischer Kollektor Sp
bsm75gb120dn2.pdf
BSM 75 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GB 120 DN2 1200V 105A HALF-BRIDGE 1 C67076-A2106-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
bsm75gb170dn2.pdf
BSM 75 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 22 OhmType VCE IC Package Ordering CodeBSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700Ga
Otros transistores... BSM400GA120DN2S , BSM400GA170DLC , BSM600GA120DLC , BSM600GA120DLCS , BSM75GAL120DN2 , BSM75GB120DLC , BSM75GB120DN2 , BSM75GB170DN2 , RJP30H2A , BSM75GD120DLC , BSM75GD120DN2 , BSM75GD60DLC , BSM75GP60 , CM1000DUC-34SA , CM1000DXL-24S , CM100DU-12F , CM100DU-24F .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ