BSM75GD120DLC Todos los transistores

 

BSM75GD120DLC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM75GD120DLC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 125 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

BSM75GD120DLC Datasheet (PDF)

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 bsm75gd120dlc.pdf pdf_icon

BSM75GD120DLC

Technische Information / Technical InformationIGBT-ModuleBSM75GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 125 APeriodischer Kollektor Spitzenstrom

 3.1. Size:285K  eupec
 bsm75gd120dn2.pdf pdf_icon

BSM75GD120DLC

BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k

 7.1. Size:211K  eupec
 bsm75gd60dlc.pdf pdf_icon

BSM75GD120DLC

Technische Information / Technical InformationIGBT-ModuleBSM 75 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC = 70 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 95 APeriodischer Kollektor Spitzenstro

 8.1. Size:153K  eupec
 bsm75gp60.pdf pdf_icon

BSM75GD120DLC

Technische Information / Technical InformationIGBT-ModuleBSM75GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 60 ARMS forward current per chip Dauergl

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: AOB30B65LN2V | MMG200D120B6TC | APTGT75DA120D1

 

 
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