CM150DU-24NFH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM150DU-24NFH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 650 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 2000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM150DU-24NFH Datasheet (PDF)
cm150du-24nfh.pdf

MITSUBISHI IGBT MODULESCM150DU-24NFHHIGH POWER SWITCHING USECM150DU-24NFHIC ...................................................................150AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL
cm150du-24f.pdf

CM150DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/1200 VoltsAT - (4 TYP.)DTC MEASURED POINTU (4 PLACES)G2HE2CJB E LCMC2E1 E2 C1E1HG1Description:GPowerex IGBTMOD Modules Q Q P NS - NUTS are designed for use in switching (3 TYP)applications. Each m
cm150du-12h.pdf

CM150DU-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODU-Series Module150 Amperes/600 VoltsTC Measured PointAE BF G H U JC2E1 E2 C1D 2 - MountingHoles CVK(6.5 Dia.)LDescription:MN3-M5 Nuts Powerex IGBTMOD ModulesO O are designed for use in switching0.110 - 0.5 TabP Q P applications. Each m
cm150du-12f.pdf

CM150DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K Japplications. Each module consistsRof two IGBT Transisto
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRGS4620DPBF | IGW75N60H3 | FD800R33KF2C-K | IKB40N65ES5 | CM400DY-24NF | VS-GB100TP120N | SKM150GB174D
History: IRGS4620DPBF | IGW75N60H3 | FD800R33KF2C-K | IKB40N65ES5 | CM400DY-24NF | VS-GB100TP120N | SKM150GB174D



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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