CM1800HC-34N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM1800HC-34N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10000 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 400 nS
Coesⓘ - Capacitancia de salida, typ: 14400 pF
Qgⓘ - Carga total de la puerta, typ: 10200 nC
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM1800HC-34N Datasheet (PDF)
cm1800hc-34n.pdf

CM1800HC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Single IGBTMODHVIGBT Module1800 Amperes/1700 VoltsADD UK (4 TYP)42 FBVCE3 1Description:Powerex IGBTMOD Modules Care designed for use in switching E GM (3 TYP)applications. Each module consists Wof one IGBT Transistor in a reverse-connected super-fast L
cm1800hc-34h.pdf

MITSUBISHI HVIGBT MODULESCM1800HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
cm1800hcb-34n.pdf

CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1800 A VCES
cm1800dy-34s.pdf

CM1800DY-34SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.comIGBT HVIGBT Series Module1800 Amperes/1700 VoltsAAN ASAPAQ H (12 PLACES)XARG YE2 G2 C2F J (18 PLACES)FPLSE2 E2 LC2E1D VC BC2E1C1 C1AALLKQ AVK K TE FW ABF G1 E1 C1P URAWFATAU ADNM (8 PLACES)AC
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APT25GP90BDF1 | HCKW75N65BH2 | SKM50GB12V | IXXH150N60C3 | IRGIB15B60KD1P
History: APT25GP90BDF1 | HCKW75N65BH2 | SKM50GB12V | IXXH150N60C3 | IRGIB15B60KD1P



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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