CM200DU-12F Todos los transistores

 

CM200DU-12F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM200DU-12F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 590 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Coesⓘ - Capacitancia de salida, typ: 3600 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM200DU-12F Datasheet (PDF)

 ..1. Size:86K  powerex
cm200du-12f.pdf pdf_icon

CM200DU-12F

CM200DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K JRapplications. Each module consistsof two IGBT Transisto

 4.1. Size:430K  1
cm200du-12nfh.pdf pdf_icon

CM200DU-12F

CM200DU-12NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module200 Amperes/600 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are de-signed for use in high frequency applications; 30 kHz W W W Wfor hard switchi

 6.1. Size:136K  1
cm200du-24f.pdf pdf_icon

CM200DU-12F

CM200DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/1200 VoltsAT - (4 TYP.)DTC MEASURED POINTU (4 PLACES)G2HE2CJB E LCMC2E1 E2 C1E1HG1Description:GPowerex IGBTMOD Modules Q Q P NS - NUTS are designed for use in switching (3 TYP)applications. Each m

 6.2. Size:191K  1
cm200du-24nfh.pdf pdf_icon

CM200DU-12F

MITSUBISHI IGBT MODULESCM200DU-24NFHHIGH POWER SWITCHING USECM200DU-24NFHIC ...................................................................200AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL

Otros transistores... CM150TX-24S , CM150TX-24S1 , CM15TF-12H , CM1600HC-34H , CM1800DY-34S , CM1800HC-34H , CM1800HC-34N , CM1800HCB-34N , FGH30S130P , CM200DU-12NFH , CM200DU-24F , CM200DU-24NFH , CM200DX-24S , CM200DX-34SA , CM200DY-12H , CM200DY-12NF , CM200DY-24A .

History: MMG75S120B6C | DF160R12W2H3_B11 | BSM400GA120DLC | MG100Q2YS50 | ISL9V2040S3S | APT45GP120B2DF2

 

 
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