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IRG4PC40F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PC40F

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 27

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247AC

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IRG4PC40F Datasheet (PDF)

1.1. irg4pc40fd.pdf Size:224K _international_rectifier

IRG4PC40F
IRG4PC40F

PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V • Generation 4 IGBT design provides tighter G parameter distribution and high

1.2. irg4pc40f.pdf Size:150K _international_rectifier

IRG4PC40F
IRG4PC40F

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE

 2.1. irg4pc40s.pdf Size:148K _international_rectifier

IRG4PC40F
IRG4PC40F

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stan

2.2. irg4pc40u.pdf Size:153K _international_rectifier

IRG4PC40F
IRG4PC40F

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3

 2.3. irg4pc40kd.pdf Size:188K _international_rectifier

IRG4PC40F
IRG4PC40F

PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design pro

2.4. irg4pc40w.pdf Size:119K _international_rectifier

IRG4PC40F
IRG4PC40F

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E • Low IGBT conduction losses

 2.5. auirg4pc40s-e.pdf Size:408K _international_rectifier

IRG4PC40F
IRG4PC40F

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G  Standard: Optimized for minimum saturation voltage E and low operating frequencies ( < 1kHz) @ VGE = 15V, IC = 31A n-channel  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry

2.6. irg4pc40k.pdf Size:125K _international_rectifier

IRG4PC40F
IRG4PC40F

 D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design provides higher efficiency G than Ge

2.7. irg4pc40ud.pdf Size:238K _international_rectifier

IRG4PC40F
IRG4PC40F

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V • Generation 4 IGBT design provides tighter G parameter distribution a

Otros transistores... IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W , RJP30H1DPD , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F .

 

 
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