CM200DY-24A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM200DY-24A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1340 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Coesⓘ - Capacitancia de salida, typ: 3000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM200DY-24A Datasheet (PDF)
cm200dy-24a.pdf

CM200DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comA-Series Module200 Amperes/1200 VoltsAF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GK K KM NUTS Description:LD(3 PLACES)(2 PLACES)Powerex IGBTMOD Modules are designed for use in switching T THICKP P Papplications. Each module Q Q U W
cm200dy-24h.pdf

MITSUBISHI IGBT MODULESCM200DY-24HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDN - DIA. signed for use in switching applica-(3 TYP.)(4 TYP.)tions. Each module consists of twoTAB#110 t=0.5IGBTs in a half-bridge configurationMLwith each transistor having a re-Mverse-conne
cm200dy-28h.pdf

CM200DY-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/1400 VoltsABF F GPC2E1 E2 C1JC DPDescription:KPowerex IGBTMOD ModulesRQ - M6 THDN - DIA.are designed for use in switching(3 TYP.)(4 TYP.)applications. Each module consists.110 TABM of two IGBT Transistors in a
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: STGP10NB60S
History: STGP10NB60S



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