CM400DU-5F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM400DU-5F
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 890 W
|Vce|ⓘ - Tensión máxima colector-emisor: 250 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 400 nS
Coesⓘ - Capacitancia de salida, typ: 7000 pF
Qgⓘ - Carga total de la puerta, typ: 1500 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM400DU-5F - IGBT
CM400DU-5F Datasheet (PDF)
cm400du-5f.pdf
CM400DU-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD400 Amperes/250 VoltsTC MEASURE POINTADFT - (4 TYP.)HG2E2CL JB EE1CMG1HUC2E1 E2 C1GS - NUTS Q Q P NDescription:(3 TYP)Powerex IGBTMOD Modulesare designed for use in switchingapplications. Each module consists
cm400du-12nfh.pdf
MITSUBISHI IGBT MODULESCM400DU-12NFHHIGH POWER SWITCHING USECM400DU-12NFHIC ...................................................................400AVCES ............................................................600VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUT
cm400du-24nfh.pdf
MITSUBISHI IGBT MODULESCM400DU-24NFHHIGH POWER SWITCHING USECM400DU-24NFHIC ...................................................................400AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL
cm400dy-66h.pdf
MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm400dy-50h.pdf
MITSUBISHI HVIGBT MODULESCM400DY-50HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-50H IC...................................................................400A VCES ....................................................... 2500V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm400dy-24a.pdf
CM400DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Dual IGBTMODA-Series Module400 Amperes/1200 VoltsAF FWG2GE2B HJE NE1GG1C2E1 E2 C1LK K K(4 PLACES) Description:M NUTS D(3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK applications. Each module consists P P PQ Q U WIDTH
cm400dy-12h.pdf
MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2