CM400DY-12H Todos los transistores

 

CM400DY-12H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM400DY-12H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 600 nS
   Coesⓘ - Capacitancia de salida, typ: 14000 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM400DY-12H Datasheet (PDF)

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CM400DY-12H

MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect

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CM400DY-12H

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CM400DY-12H

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CM400DY-12H

MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: AOB30B65LN2V | APTGT75DA120D1 | MMG200D120B6TC

 

 
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History: AOB30B65LN2V | APTGT75DA120D1 | MMG200D120B6TC

CM400DY-12H
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