CM50TL-24NF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM50TL-24NF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 390 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 750 pF
Qgⓘ - Carga total de la puerta, typ: 250 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM50TL-24NF - IGBT
CM50TL-24NF Datasheet (PDF)
cm50tl-24nf.pdf
CM50TL-24NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMODwww.pwrx.comNF-Series Module50 Amperes/1200 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NK AA ABB U V WQUPLDescription:TK KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module KWV co
cm50tf-24h.pdf
MITSUBISHI IGBT MODULESCM50TF-24HMEDIUM POWER SWITCHING USEINSULATED TYPEAC SX Q X Q X NZ - M4 THD(7 TYP.)GuP EuP GvP EvP GwP EwPPPGuN EuN GvN EvN GwN E wNPGBDGNRU V WENTJKUNDescription:Mitsubishi IGBT Modules are de-Y DIA. (4 TYP.)M M AA signed for use in switching appli-AAL Lcations. Each module consists ofsix IGBTs in a th
cm50tu-24f.pdf
CM50TU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD50 Amperes/1200 VoltsJT (4 TYP.)S - NUTS (5 TYP) KKRCMN PPGUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesL N L N Lare design
cm50tf-12h.pdf
CM50TF-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Six-IGBT IGBTMODH-Series Module50 Amperes/600 VoltsABCB u P E u P B v P E v P B w P E w PPJ N E DuvwNB u N E u N B v N E v N B w N E w NS - DIA.M F F K(2 TYP.)R R RDescription:L L QPowerex IGBTMOD Modulesare designed for use in switching.250 TAB .110 TAB
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2