DIM1200ESM33-F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM1200ESM33-F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 15600 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 275 nS

Encapsulados: MODULE

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DIM1200ESM33-F datasheet

 ..1. Size:438K  dynex
 dim1200esm33-f.pdf pdf_icon

DIM1200ESM33-F

DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L

 7.1. Size:454K  dynex
 dim1200asm45-ts.pdf pdf_icon

DIM1200ESM33-F

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux

 7.2. Size:421K  dynex
 dim1200fsm17-a.pdf pdf_icon

DIM1200ESM33-F

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

 7.3. Size:458K  dynex
 dim1200asm45-ts001.pdf pdf_icon

DIM1200ESM33-F

Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10 s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

MOSTRAR MÁS

Otros transistores... DIM1000ECM33-TS, DIM1000NSM33-TL, DIM1000NSM33-TS, DIM1000XSM33-TL001, DIM1000XSM33-TS001, DIM100PHM33-F, DIM1200ASM45-TS, DIM1200ASM45-TS001, CRG40T65AK5HD, DIM1200FSM12-A, DIM1200FSM17-A, DIM1200FSS12-A, DIM1500ASM33-TL001, DIM1500ASM33-TS001, DIM1500ESM33-TL, DIM1500ESM33-TS, DIM1600ECM17-A