DIM1500ESM33-TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DIM1500ESM33-TL
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 15600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1500 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 430 nS
Qgⓘ - Carga total de la puerta, typ: 25000 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DIM1500ESM33-TL - IGBT
DIM1500ESM33-TL Datasheet (PDF)
dim1500esm33-ts.pdf
DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1500A Soft Punch Through Silicon IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals
dim1500esm33-tl.pdf
DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With
dim1500asm33-tl001.pdf
DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10.2kV Isolation IC (max) 1500A 10s Short Circuit Withstand IC(PK) (max) 3000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I
dim1500asm33-ts001.pdf
DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With A
Otros transistores... DIM1200ASM45-TS , DIM1200ASM45-TS001 , DIM1200ESM33-F , DIM1200FSM12-A , DIM1200FSM17-A , DIM1200FSS12-A , DIM1500ASM33-TL001 , DIM1500ASM33-TS001 , SGT50T65FD1PN , DIM1500ESM33-TS , DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2