DIM400DCM17-A Todos los transistores

 

DIM400DCM17-A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DIM400DCM17-A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 3470 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 250 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DIM400DCM17-A Datasheet (PDF)

 ..1. Size:405K  dynex
dim400dcm17-a.pdf pdf_icon

DIM400DCM17-A

DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.528FEATURES 6 x O70.216VCES 1700V 10s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth0.240IC (max) 400A High Thermal Cycling Capability max 8IC(PK) (max) 800A 0.253 Non Punch Through Silicon * Measured at the power

 7.1. Size:338K  dynex
dim400ddm12-a.pdf pdf_icon

DIM400DCM17-A

DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

 7.2. Size:335K  dynex
dim400dds12-a.pdf pdf_icon

DIM400DCM17-A

DIM400DDS12-A000 Dual Switch IGBT Module Replaces DS5841-1.1 DS5841-2 November 2009 (LN26744) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

 7.3. Size:392K  dynex
dim400ddm17-a.pdf pdf_icon

DIM400DCM17-A

DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57I

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History: VS-GB70LA60UF | SKM50GB12V | IKA10N65ET6 | LEGM75BE120L5H | SGTP75V65SDB1P7 | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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