DIM800DCS12-A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM800DCS12-A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 6940 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 250 nS

Encapsulados: MODULE

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DIM800DCS12-A datasheet

 ..1. Size:814K  dynex
 dim800dcs12-a.pdf pdf_icon

DIM800DCS12-A

DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 (LN24042) KEY PARAMETERS FEATURES VCES 1200V 10 s Short Circuit Withstand VCE (sat)* (typ) 2.2V IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated Copper Baseplate * (measured at the power busbars and not the auxiliary terminals) Lead Free construction APPLICATIONS Chopper DC Mo

 6.1. Size:201K  dynex
 dim800dcm12-a.pdf pdf_icon

DIM800DCS12-A

DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 DS5548- FEATURES KEY PARAMETERS VCES 1200V 10 s Short Circuit Withstand VCE(sat)* (typ) 2.2V High Thermal Cycling Capability IC (max) 800A IC(PK) (max) 1600A Non Punch Through Silicon *(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

 6.2. Size:445K  dynex
 dim800dcm17-a.pdf pdf_icon

DIM800DCS12-A

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

 7.1. Size:389K  dynex
 dim800dds12-a.pdf pdf_icon

DIM800DCS12-A

DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK)

MOSTRAR MÁS

Otros transistores... DIM500GCM33-TS, DIM500GDM33-TL, DIM500GDM33-TS, DIM600DCM17-A, DIM600DDM17-A, DIM600DDS12-A, DIM800DCM12-A, DIM800DCM17-A, FGH30S130P, DIM800DDM12-A, DIM800DDM17-A, DIM800DDS12-A, DIM800ECM33-F, DIM800FSM12-A, DIM800FSM17-A, DIM800FSS12-A, DIM800NSM33-F