DIM800NSM33-F Datasheet. Equivalente

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 dim800nsm33-f.pdf

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 dim800dds12-a.pdf

DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK)

 8.2. Size:449K  dynex
 dim800xsm45-ts.pdf

Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 (LN30438) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A High Current Density Enhanced DMOS * Measured at th

 8.3. Size:469K  dynex
 dim800ecm33-f.pdf

DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.2 DS5815-3 September 2012 (LN29759) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals L

 8.4. Size:421K  dynex
 dim800fsm12-a.pdf

DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 (LN27682) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 8.5. Size:814K  dynex
 dim800dcs12-a.pdf

DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 (LN24042) KEY PARAMETERS FEATURES VCES 1200V 10 s Short Circuit Withstand VCE (sat)* (typ) 2.2V IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated Copper Baseplate * (measured at the power busbars and not the auxiliary terminals) Lead Free construction APPLICATIONS Chopper DC Mo

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 dim800xsm33-f.pdf

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 dim800xsm45-ts001.pdf

Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-3 DS6090-4 February 2014 (LN31312) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A High Current Density Enhanced DMOS SPT IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the auxi

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 dim800dcm12-a.pdf

DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 DS5548- FEATURES KEY PARAMETERS VCES 1200V 10 s Short Circuit Withstand VCE(sat)* (typ) 2.2V High Thermal Cycling Capability IC (max) 800A IC(PK) (max) 1600A Non Punch Through Silicon *(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

 8.9. Size:421K  dynex
 dim800fsm17-a.pdf

DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 (LN27717) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 8.10. Size:390K  dynex
 dim800ddm12-a.pdf

DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (

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 dim800fss12-a.pdf

DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-1.1 DS5867-2 November 2010 (LN27709) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 1600A Lead Free construction * Measured at the power busbars, not the auxiliary

 8.12. Size:445K  dynex
 dim800dcm17-a.pdf

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

 8.13. Size:393K  dynex
 dim800ddm17-a.pdf

DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 I