MG12100D-BA1MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG12100D-BA1MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1000 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 600 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MG12100D-BA1MM Datasheet (PDF)
mg12100d-ba1mm.pdf

Power Module1200V 100A IGBT ModuleRoHSMG12100D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic
mg12100w-xn2mm.pdf

Power Module1200V 100A IGBT ModuleRoHSMG12100W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr
mg12100s-bn2mm.pdf

Power Module1200V 100A IGBT ModuleRoHSMG12100S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAge
mg12105s-ba1mm.pdf

Power Module1200V 100A IGBT ModuleRoHSMG12105S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristi
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75SR120UZK | APTGT50TA170P | ART30U120 | STGP20NC60V | NCE160ED65VTP4 | JT600N120F2MH1E | SMBL1G200US120
History: MMG75SR120UZK | APTGT50TA170P | ART30U120 | STGP20NC60V | NCE160ED65VTP4 | JT600N120F2MH1E | SMBL1G200US120



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor