MG12225WB-BN2MM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG12225WB-BN2MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1050 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 325 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MG12225WB-BN2MM IGBT
MG12225WB-BN2MM PDF specs
mg12225wb-bn2mm.pdf
Power Module 1200V 225A IGBT Module RoHS MG12225WB-BN2MM Features IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail current Applications AC motor control Photovoltaic/Fuel cell Mot... See More ⇒
mg1225h-xbn2mm.pdf
Power Module 1200V 25A IGBT Module RoHS MG1225H-XBN2MM Features High level of Free wheeling diodes integration only one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mounting coeff... See More ⇒
mg1225h-xn2mm.pdf
Power Module 1200V 25A IGBT Module RoHS MG1225H-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curren... See More ⇒
mg12200d-bn2mm.pdf
Power Module 1200V 200A IGBT Module RoHS MG12200D-BN2MM Features High short circuit Fast switching and short capability, self limiting tail current short circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching losses temperature coefficient Applications ... See More ⇒
Otros transistores... MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM , MG12200D-BN2MM , CRG60T60AN3H , MG1225H-XBN2MM , MG1225H-XN2MM , MG12300D-BA1MM , MG12300D-BN2MM , MG12300D-BN3MM , MG12300WB-BN2MM , MG12400D-BN2MM , MG1240H-XBN2MM .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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