MG1225H-XBN2MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG1225H-XBN2MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 147 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MG1225H-XBN2MM Datasheet (PDF)
mg1225h-xbn2mm.pdf

Power Module1200V 25A IGBT ModuleRoHSMG1225H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff
mg1225h-xn2mm.pdf

Power Module1200V 25A IGBT ModuleRoHSMG1225H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
mg12225wb-bn2mm.pdf

Power Module1200V 225A IGBT ModuleRoHSMG12225WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot
mg12200d-bn2mm.pdf

Power Module1200V 200A IGBT ModuleRoHSMG12200D-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplications
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MIXA80WB1200TEH | IXYH40N65C3H1 | IKW40N65F5 | MIXA30WB1200TED | JNG40T65HYU1 | CM300DU-12F | NCE160ED65VTP
History: MIXA80WB1200TEH | IXYH40N65C3H1 | IKW40N65F5 | MIXA30WB1200TED | JNG40T65HYU1 | CM300DU-12F | NCE160ED65VTP



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet