IRG4PH40U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PH40U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 160 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.43 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 24 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Qgⓘ - Carga total de la puerta, typ: 86 nC
Paquete / Cubierta: TO247AC
- Selección de transistores por parámetros
IRG4PH40U Datasheet (PDF)
irg4ph40u.pdf

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.43VG parameter distribution and higher efficiency than previous gene
irg4ph40ud.pdf

PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat
irg4ph40ud2-e.pdf

PD - 96781AIRG4PH40UD2-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast IGBT optimized for high operatingVCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafastVCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use inG resonant circuits Indus
irg4ph40kd.pdf

PD- 91577BIRG4PH40KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.74V Combines low conduction losses with highG switching speed
Otros transistores... IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , GT45F122 , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD .
History: IGF40T120F
History: IGF40T120F



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