IRG4PH40U Todos los transistores

 

IRG4PH40U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PH40U

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 160 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.43 V @25℃

trⓘ - Tiempo de subida, typ: 24 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO247AC

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IRG4PH40U datasheet

 ..1. Size:166K  international rectifier
irg4ph40u.pdf pdf_icon

IRG4PH40U

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous gene

 0.1. Size:339K  international rectifier
irg4ph40ud.pdf pdf_icon

IRG4PH40U

PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher efficiency than previous generat

 0.2. Size:299K  international rectifier
irg4ph40ud2-e.pdf pdf_icon

IRG4PH40U

PD - 96781A IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast VCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use in G resonant circuits Indus

 6.1. Size:219K  international rectifier
irg4ph40kd.pdf pdf_icon

IRG4PH40U

PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.74V Combines low conduction losses with high G switching speed

Otros transistores... IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , MBQ50T65FDSC , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD .

History: MMG200S060B6N | IXGA20N250 | MUBW50-12A8

 

 

 


History: MMG200S060B6N | IXGA20N250 | MUBW50-12A8

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