MG1250W-XBN2MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG1250W-XBN2MM
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: MODULE
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MG1250W-XBN2MM Datasheet (PDF)
mg1250w-xbn2mm.pdf
Power ModulePower Module1200V 50A IGBT ModuleRoHSMG1250W-XBN2MM Features High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PC
mg1250s-ba1mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg1250h-xn2mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
Otros transistores... MG12300D-BN2MM , MG12300D-BN3MM , MG12300WB-BN2MM , MG12400D-BN2MM , MG1240H-XBN2MM , MG12450WB-BN2MM , MG1250H-XN2MM , MG1250S-BA1MM , MBQ50T65FDSC , MG1275H-XN2MM , MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2