MG1275H-XN2MM Todos los transistores

 

MG1275H-XN2MM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG1275H-XN2MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 348 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 105 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Paquete / Cubierta: MODULE
 

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MG1275H-XN2MM PDF specs

 ..1. Size:1726K  littelfuse
mg1275h-xn2mm.pdf pdf_icon

MG1275H-XN2MM

Power Module 1200V 75A IGBT Module RoHS MG1275H-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curren... See More ⇒

 8.1. Size:1525K  littelfuse
mg1275w-xn2mm.pdf pdf_icon

MG1275H-XN2MM

Power Module 1200V 75A IGBT Module RoHS MG1275W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail curren... See More ⇒

 8.2. Size:1841K  littelfuse
mg1275w-xbn2mm.pdf pdf_icon

MG1275H-XN2MM

Power Module 1200V 75A IGBT Module RoHS MG1275W-XBN2MM Features High level of Free wheeling diodes integration only one with fast and soft reverse power semiconductor recovery module required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PCB coefficien... See More ⇒

 8.3. Size:1852K  littelfuse
mg1275s-ba1mm.pdf pdf_icon

MG1275H-XN2MM

Power Module 1200V 75A IGBT Module RoHS MG1275S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics... See More ⇒

Otros transistores... MG12300D-BN3MM , MG12300WB-BN2MM , MG12400D-BN2MM , MG1240H-XBN2MM , MG12450WB-BN2MM , MG1250H-XN2MM , MG1250S-BA1MM , MG1250W-XBN2MM , IRGP4063D , MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 .

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