MG17300D-BN4MM Todos los transistores

 

MG17300D-BN4MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG17300D-BN4MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1450 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Paquete / Cubierta: MODULE
 

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MG17300D-BN4MM Datasheet (PDF)

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MG17300D-BN4MM

Power Module1700V 300A IGBT ModuleRoHSMG17300D-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications High frequency switching Motion/servo con

 7.1. Size:1418K  littelfuse
 mg17300wb-bn4mm.pdf pdf_icon

MG17300D-BN4MM

Power Module1700V 300A IGBT ModuleRoHSMG17300WB-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications AC motor control Inverter and power suppli

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