MG17300D-BN4MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG17300D-BN4MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1450 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MG17300D-BN4MM Datasheet (PDF)
mg17300d-bn4mm.pdf

Power Module1700V 300A IGBT ModuleRoHSMG17300D-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications High frequency switching Motion/servo con
mg17300wb-bn4mm.pdf

Power Module1700V 300A IGBT ModuleRoHSMG17300WB-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications AC motor control Inverter and power suppli
Otros transistores... MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , IKW30N60H3 , MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 .
History: SKM600GB126D | IXGH30N60B | IKW50N65WR5 | NGTB50N120FL2WG | IRG4BC30UD | MMG15CB120XB6TC | IRG7PH35UD1M
History: SKM600GB126D | IXGH30N60B | IKW50N65WR5 | NGTB50N120FL2WG | IRG4BC30UD | MMG15CB120XB6TC | IRG7PH35UD1M



Liste
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