MIXA600PF650TSF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIXA600PF650TSF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 720 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Qgⓘ - Carga total de la puerta, typ: 840 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MIXA600PF650TSF - IGBT
MIXA600PF650TSF Datasheet (PDF)
mixa600pf650tsf.pdf
MIXA600PF650TSFtentativeVCES = 2x 650VXPT IGBT ModuleI= 720AC25VCE(sat) = 1.65 VPhase leg + free wheeling Diodes + NTCPart numberMIXA600PF650TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module requi
mixa600cf650tsf.pdf
MIXA600CF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon collector + free wheeling diodesPart numberMIXA600CF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indu
mixa600af650tsf.pdf
MIXA600AF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon emitter + free wheeling diodesPart numberMIXA600AF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indust
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