IXBH15N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH15N170
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 83 pF
Qgⓘ - Carga total de la puerta, typ: 69 nC
Paquete / Cubierta: TO247AD
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IXBH15N170 Datasheet (PDF)
ixbh15n170 ixbt15n170.pdf
Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24
ixbh15n140 ixbh15n160.pdf
High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140
ixbh15n140-160.pdf
High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140
ixbh10n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBH10N300BIMOSFETTM MonolithicIC110 = 10ABipolar MOS TransistorVCE(sat) 3.2VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30
ixbh10n170.pdf
VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX
ixbh16n170a ixbt16n170a.pdf
Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1
ixbh10n170 ixbt10n170.pdf
VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX
ixbh12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixbh14n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM
ixbh16n170a.pdf
Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1
ixbh16n170.pdf
High Voltage, High GainVCES = 1700VIXBH16N170BIMOSFETTM MonolithicIXBT16N170IC90 = 16ABipolar MOS TransistorVCE(sat) 3.3VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 40 ATO-268 (IXBT
ixbh10n300hv.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBA10N300HVBIMOSFETTM MonolithicIXBH10N300HVIC110 = 10ABipolar MOS TransistorVCE(sat) 2.8VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V
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