MM40G3T120B Todos los transistores

 

MM40G3T120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MM40G3T120B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MM40G3T120B Datasheet (PDF)

 ..1. Size:172K  macmic
 mm40g3t120b.pdf pdf_icon

MM40G3T120B

MM40G3T120B1200V 40A IGBTMay 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical applica

 8.1. Size:332K  macmic
 mm40g3u120bx.pdf pdf_icon

MM40G3T120B

MM40G3U120BX1200V 40A IGBTSeptember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical

 8.2. Size:332K  macmic
 mm40g3u120b.pdf pdf_icon

MM40G3T120B

MM40G3U120B1200V 40A IGBTSeptember 2019 Version 03 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical a

 8.3. Size:350K  macmic
 mm40g3u65b.pdf pdf_icon

MM40G3T120B

MM40G3U65B650V 40A IGBTMay 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appl

MOSTRAR MÁS

Otros transistores... FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B , MM20G3R135B , MM20G3T135B , MM25G3T120B , MM25G3U120BX , MBQ50T65FESC , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , MM50G3T120BM , MM50G3U120BMX , MM60G3U65B , MM75G3T65B .

History: STGWA60NC60WDR | MMG50H120H6HN | RJP60F4DPM | HGTH12N40C1 | RJH60D5DPM | NGB8204N

 

 
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