MMG100HB060B6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100HB060B6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 330
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 125
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 20
Carga total de la puerta (Qg), typ, nC: 1100
Paquete / Cubierta: MODULE
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MMG100HB060B6EN Datasheet (PDF)
mmg100hb060b6en.pdf
MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb060h6en.pdf
MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb120h6hn.pdf
MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
Otros transistores... MM40G3U65BN , MM50G3T120BM , MM50G3U120BMX , MM60G3U65B , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , FGH75T65UPD , MMG100J120U6HN , MMG100J120U6T4N , MMG100J120U6TC , MMG100J120UZ6HN , MMG100J120UZ6T4N , MMG100J120UZ6TC , MMG100J120UZ6TN , MMG100S060B6TC .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ