MMG100J120U6T4N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG100J120U6T4N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 555 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Encapsulados: SOT227

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MMG100J120U6T4N datasheet

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 mmg100j120u6t4n.pdf pdf_icon

MMG100J120U6T4N

MMG100J120U6T4N 1200V 100A IGBT Module March 2015 Preliminary RoHS Compliant PRODUCT FEATURES IGBT4 Chip(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS AC motor c

 1.1. Size:278K  macmic
 mmg100j120u6tc.pdf pdf_icon

MMG100J120U6T4N

MMG100J120U6TC 1200V 100A IGBT Module July 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS AC motor contr

 2.1. Size:152K  macmic
 mmg100j120u6hn.pdf pdf_icon

MMG100J120U6T4N

MMG100J120U6HN 1200V 100A IGBT Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS Hig

MOSTRAR MÁS

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