MMG100J120U6T4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100J120U6T4N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 555
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 20
Carga total de la puerta (Qg), typ, nC: 800
Paquete / Cubierta: SOT227
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MMG100J120U6T4N Datasheet (PDF)
mmg100j120u6t4n.pdf
MMG100J120U6T4N1200V 100A IGBT ModuleMarch 2015 Preliminary RoHS CompliantPRODUCT FEATURES IGBT4 Chip(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS AC motor c
mmg100j120u6tc.pdf
MMG100J120U6TC1200V 100A IGBT ModuleJuly 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS AC motor contr
mmg100j120u6hn.pdf
MMG100J120U6HN1200V 100A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS Hig
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ