MMG100S120B6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100S120B6TC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 515 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 148 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 48 nS
Qgⓘ - Carga total de la puerta, typ: 530 nC
Paquete / Cubierta: MODULE
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MMG100S120B6TC Datasheet (PDF)
mmg100s120b6tc.pdf
MMG100S120B6TC1200V 100A IGBT ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency sw
mmg100s120b6tn.pdf
MMG100S120B6TN1200V 100A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesA
mmg100s120b6hn.pdf
MMG100S120B6HN1200V 100A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg100s120b6c.pdf
MMG100S120B6C 1200V 100A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching ap
mmg100s120b6un.pdf
MMG100S120B6UN 1200V 100A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA
mmg100s120b6uc.pdf
MMG100S120B6UC1200V 100A IGBT ModuleNovember 2018 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inv
Otros transistores... MMG100J120U6HN , MMG100J120U6T4N , MMG100J120U6TC , MMG100J120UZ6HN , MMG100J120UZ6T4N , MMG100J120UZ6TC , MMG100J120UZ6TN , MMG100S060B6TC , SGT60U65FD1PT , MMG100S120B6UC , MMG100S120UA6TC , MMG100S120UA6TN , MMG100S120UK6TN , MMG100S170B , MMG100S170B6TC , MMG100W060X6EN , MMG100W060XB6EN .
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