MMG100S170B6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100S170B6TC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 681 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 155 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 85 nS
Qgⓘ - Carga total de la puerta, typ: 800 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMG100S170B6TC IGBT
MMG100S170B6TC Datasheet (PDF)
mmg100s170b6tc.pdf

MMG100S170B6TC1700V 100A IGBT ModuleAugust 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Motion/servo c
mmg100s170b6en.pdf

MMG100S170B6EN1700V 100A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switching appli
mmg100s170b.pdf

MMG100S170B1700V 100A IGBT ModuleOctober 2018 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control
mmg100s120b6hn.pdf

MMG100S120B6HN1200V 100A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
Otros transistores... MMG100J120UZ6TN , MMG100S060B6TC , MMG100S120B6TC , MMG100S120B6UC , MMG100S120UA6TC , MMG100S120UA6TN , MMG100S120UK6TN , MMG100S170B , GT30J124 , MMG100W060X6EN , MMG100W060XB6EN , MMG100W120X6TC , MMG100W120XB6T4N , MMG100WD120XB6T4N , MMG100WD120XB6TC , MMG100WD120XT6TC , MMG10CB120X6TC .
History: MMG150D120B6UC | GT8J102
History: MMG150D120B6UC | GT8J102



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc945 transistor equivalent | 2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent | 2sc871 replacement | a872 transistor | b1560