MMG100W120X6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100W120X6TC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 515 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 147 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Paquete / Cubierta: MODULE
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MMG100W120X6TC Datasheet (PDF)
mmg100w120x6tc.pdf
MMG100W120X6TC1200V 100A Six-Pack ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper
mmg100w120x6tn.pdf
MMG100W120X6TN1200V 100A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr
mmg100w120xb6t4n.pdf
MMG100W120XB6T4N1200V 100A PIM ModuleFebruary 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current F
mmg100w060xb6en.pdf
MMG100W060XB6EN600V 100A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop
mmg100w060x6en.pdf
MMG100W060X6EN600V 100A Six-Pack ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Indus
mmg100wd120xt6tc.pdf
MMG100WD120XT6TC1200V 100A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu
mmg100wd120xb6tc.pdf
MMG100WD120XB6TC1200V 100A PIM ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg100wd120xb6t4n.pdf
MMG100WD120XB6T4N1200V 100A PIM ModuleMarch 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fre
Otros transistores... MMG100S120B6UC , MMG100S120UA6TC , MMG100S120UA6TN , MMG100S120UK6TN , MMG100S170B , MMG100S170B6TC , MMG100W060X6EN , MMG100W060XB6EN , FGD4536 , MMG100W120XB6T4N , MMG100WD120XB6T4N , MMG100WD120XB6TC , MMG100WD120XT6TC , MMG10CB120X6TC , MMG10CB120XB6TC , MMG150B065PD6EN , MMG150B065PD6TC .
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