MMG100WD120XB6T4N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG100WD120XB6T4N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 515 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Encapsulados: MODULE

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MMG100WD120XB6T4N datasheet

 0.1. Size:1531K  macmic
 mmg100wd120xb6tc.pdf pdf_icon

MMG100WD120XB6T4N

MMG100WD120XB6TC 1200V 100A PIM Module June 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 0.2. Size:433K  macmic
 mmg100wd120xb6t4n.pdf pdf_icon

MMG100WD120XB6T4N

MMG100WD120XB6T4N 1200V 100A PIM Module March 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology) Diode Chip(Emcon4 wheeling diode) High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fre

 2.1. Size:1625K  macmic
 mmg100wd120xt6tc.pdf pdf_icon

MMG100WD120XB6T4N

MMG100WD120XT6TC 1200V 100A Rectifier+Inverter Module June 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu

MOSTRAR MÁS

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