MMG100WD120XT6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG100WD120XT6TC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 515 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 147 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 54 nS
Paquete / Cubierta: MODULE
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MMG100WD120XT6TC Datasheet (PDF)
mmg100wd120xt6tc.pdf
MMG100WD120XT6TC1200V 100A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu
mmg100wd120xb6tc.pdf
MMG100WD120XB6TC1200V 100A PIM ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg100wd120xb6t4n.pdf
MMG100WD120XB6T4N1200V 100A PIM ModuleMarch 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fre
Otros transistores... MMG100S170B , MMG100S170B6TC , MMG100W060X6EN , MMG100W060XB6EN , MMG100W120X6TC , MMG100W120XB6T4N , MMG100WD120XB6T4N , MMG100WD120XB6TC , SGT40N60NPFDPN , MMG10CB120X6TC , MMG10CB120XB6TC , MMG150B065PD6EN , MMG150B065PD6TC , MMG150CE065PD6TC , MMG150D120B6TC , MMG150D120B6UC , MMG150D120UA6TN .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2