MMG150WB170H6EN Todos los transistores

MMG150WB170H6EN 1700V 150A Four-Pack Module February 2016 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery APPLICATIONS High frequency switch

MMG150W060XB6EN 600V 150A PIM Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop

MMG150W120X6TC 1200V 150A Six-Pack Module June 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

MMG150WJ120XB6TC 1200V 150A PIM Module April 2021 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+FS) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base plate and sol

MMG150W060X6EN 600V 150A Six-Pack Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Indus

MMG150W120X6TN 1200V 150A Six-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology) Diode Chip(Emcon3 wheeling diode) High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr