MMG200D120UA6TN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG200D120UA6TN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1050 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 290 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Encapsulados: MODULE

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MMG200D120UA6TN datasheet

 0.1. Size:436K  macmic
mmg200d120ua6tc.pdf pdf_icon

MMG200D120UA6TN

MMG200D120UA6TC 1200V 200A IGBT Module July 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switc

 0.2. Size:407K  macmic
mmg200d120ua6tn.pdf pdf_icon

MMG200D120UA6TN

MMG200D120UA6TN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 3.1. Size:406K  macmic
mmg200d120uk6tn.pdf pdf_icon

MMG200D120UA6TN

MMG200D120UK6TN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

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