MMG35HD120XT6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG35HD120XT6TC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 54 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 35 nS
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: MODULE
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MMG35HD120XT6TC Datasheet (PDF)
mmg35hd120xt6tc.pdf
MMG35HD120XT6TC1200V 35A Rectifier+Inverter ModuleAugust 2018 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu
mmg35hd120xb6tc.pdf
MMG35HD120XB6TC1200V 35A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
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MMG35CB120X6TC1200V 35A Six-Pack ModuleNovember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to int
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