MMG400D120UK6HN Todos los transistores

 

MMG400D120UK6HN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG400D120UK6HN

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2100

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 600

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 75

Empaquetado / Estuche: MODULE

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MMG400D120UK6HN Datasheet (PDF)

0.1. mmg400d120uk6hn.pdf Size:396K _macmic

MMG400D120UK6HN
MMG400D120UK6HN

MMG400D120UK6HN 1200V 400A IGBT Module December 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switch

3.1. mmg400d120ua6tn.pdf Size:474K _macmic

MMG400D120UK6HN
MMG400D120UK6HN

MMG400D120UA6TN1200V 400A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

3.2. mmg400d120ua6tc.pdf Size:436K _macmic

MMG400D120UK6HN
MMG400D120UK6HN

MMG400D120UA6TC1200V 400A IGBT ModuleAugust 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swi

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