MMG450D120UA6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG450D120UA6TC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2142 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 630 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 78 nS
Paquete / Cubierta: MODULE
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MMG450D120UA6TC Datasheet (PDF)
mmg450d120ua6tc.pdf
MMG450D120UA6TC1200V 450A IGBT ModuleJuly 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switc
mmg450d120b6tc.pdf
MMG450D120B6TC1200V 450A IGBT ModuleJuly 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switch
mmg450d120b6tn.pdf
MMG450D120B6TN 1200V 450A IGBT Module January 2014 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT3 CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losse
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