MMG50HD120XB6TC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG50HD120XB6TC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 278 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 77 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 35 nS
Encapsulados: MODULE
Búsqueda de reemplazo de MMG50HD120XB6TC IGBT
- Selecciónⓘ de transistores por parámetros
MMG50HD120XB6TC datasheet
mmg50hd120xb6t4n.pdf
MMG50HD120XB6T4N 1200V 50A PIM Module January 2016 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration CHIP(Trench+Field Stop IGBT4 and EmCon4 diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated co
mmg50hd120xb6tc.pdf
MMG50HD120XB6TC 1200V 50A PIM Module August 2018 Version 01 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
mmg50hd120xt6tc.pdf
MMG50HD120XT6TC 1200V 50A Rectifier+Inverter Module August 2018 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu
Otros transistores... MMG450WB120B6E4N, MMG450WB120B6TC, MMG450WB170B, MMG450WE065B6EN, MMG450WE120B6TC, MMG50H060XB6EN, MMG50H120X6TC, MMG50HD120XB6T4N, FGPF4533, MMG50HD120XT6TC, MMG50J120UZ6TC, MMG50S120B6TC, MMG50S120B6UC, MMG50S120UA6TN, MMG50S170B, MMG50S170B6TC, MMG50W060XB6EN
History: MMG50H060XB6EN
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc1945 | c2383 | 2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c



