MMG50S170B6TC Todos los transistores

 

MMG50S170B6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG50S170B6TC
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 416 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 78 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Qgⓘ - Carga total de la puerta, typ: 380 nC
   Paquete / Cubierta: MODULE
 

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MMG50S170B6TC Datasheet (PDF)

 ..1. Size:210K  macmic
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MMG50S170B6TC

MMG50S170B6TC1700V 50A IGBT ModuleOctober 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Motion/servo co

 3.1. Size:175K  macmic
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MMG50S170B6TC

MMG50S170B6EN1700V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switching applica

 4.1. Size:907K  macmic
mmg50s170b.pdf pdf_icon

MMG50S170B6TC

MMG50S170B1700V 50A IGBT ModuleJuly 2016 Preliminary RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Mot

 7.1. Size:342K  macmic
mmg50s120b6hn.pdf pdf_icon

MMG50S170B6TC

MMG50S120B6HN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

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History: NGTB15N120IHWG | BSM200GD60DLC | MMG600K120U6TN | IXSP20N60B2 | FGH50N6S2D | AOTS40B65H1 | SG35N12DT

 

 
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