MMG50W060XB6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG50W060XB6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 190
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 60
Carga total de la puerta (Qg), typ, nC: 500
Paquete / Cubierta: MODULE
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MMG50W060XB6EN Datasheet (PDF)
mmg50w060xb6en.pdf
MMG50W060XB6EN600V 50A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe
mmg50w120xt6tc.pdf
MMG50W120XT6TC1200V 50A Rectifier+Inverter ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat
mmg50w120xb6tn.pdf
MMG50W120XB6TN1200V 50A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base
mmg50w120xb6tc.pdf
MMG50W120XB6TC1200V 50A PIM ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base
Otros transistores... MMG50HD120XB6TC , MMG50HD120XT6TC , MMG50J120UZ6TC , MMG50S120B6TC , MMG50S120B6UC , MMG50S120UA6TN , MMG50S170B , MMG50S170B6TC , FGPF4536 , MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ