MMG50W120XT6TC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG50W120XT6TC

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 278 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 76 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Encapsulados: MODULE

 Búsqueda de reemplazo de MMG50W120XT6TC IGBT

- Selecciónⓘ de transistores por parámetros

 

MMG50W120XT6TC datasheet

 ..1. Size:1288K  macmic
 mmg50w120xt6tc.pdf pdf_icon

MMG50W120XT6TC

MMG50W120XT6TC 1200V 50A Rectifier+Inverter Module July 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat

 4.1. Size:478K  macmic
 mmg50w120xb6tn.pdf pdf_icon

MMG50W120XT6TC

MMG50W120XB6TN 1200V 50A PIM Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 4.2. Size:1433K  macmic
 mmg50w120xb6tc.pdf pdf_icon

MMG50W120XT6TC

MMG50W120XB6TC 1200V 50A PIM Module July 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 8.1. Size:232K  macmic
 mmg50w060xb6en.pdf pdf_icon

MMG50W120XT6TC

MMG50W060XB6EN 600V 50A PIM Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe

MOSTRAR MÁS

Otros transistores... MMG50J120UZ6TC, MMG50S120B6TC, MMG50S120B6UC, MMG50S120UA6TN, MMG50S170B, MMG50S170B6TC, MMG50W060XB6EN, MMG50W120XB6TC, FGPF4536, MMG600K060U6EN, MMG600WB060DAK6EN, MMG600WB065B6EN, MMG600WB065B6TC, MMG600WB065TLA6EN, MMG600WB065TLB6EN, MMG600WB120B6E4N, MMG600WB120B6TC