MMG600K060U6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG600K060U6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1650 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 720 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Qgⓘ - Carga total de la puerta, typ: 6400 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMG600K060U6EN - IGBT
MMG600K060U6EN Datasheet (PDF)
mmg600k060u6en.pdf
MMG600K060U6EN600V 600A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg600k120u6hn.pdf
MMG600K120U6HN1200V 600A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los
mmg600k120u6tn.pdf
MMG600K120U6TN 1200V 600A IGBT Module December 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 10K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE
mmg600k170u6en.pdf
MMG600K170U6EN1700V 600A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery 5K Gate Protected Resistance InsideAPP
mmg600kr120u.pdf
MMG600KR120U 1200V 600A IGBT Module October 2009 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 10K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE MA
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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